Fairchild Manuals (Industrial)

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FQP7N65C/FQPF7N65C is a 650V N-channel MOSFET manufactured by Fairchild. It features low gate charge, low drain-source capacitance, fast switching, 100% avalanche tested and improved dv/dt capability. This device is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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The FQPF7N60 is a 600V N-channel MOSFET produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has the features of low on-state resistance, fast switching, 100% avalanche testing, etc.

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QFET QFET QFET QFET is an integrated circuit brand owned by Dinghao Electronics. QFET QFET QFET QFET products cover MOSFET, IGBT, SiC MOSFET, SiC JFET, SiC JBS, SiC PIN, GaN HEMT and other products, widely used in electric vehicles, new energy, rail transit, industrial control, 5G communications, photovoltaics and other fields.

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Dinghao is a website that provides spot inventory, technical data, encyclopedia information, hot news

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FQPF7N20L is a 200V N-Channel MOSFET produced by Fairchild. It features low gate charge and low on-state resistance, making it suitable for high efficiency switching DC/DC converters, switch mode power supplies and motor control applications.

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This document contains the list of QFET products in Dinghao's inventory, including the product name, brand, and model

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This document is the technical information of QFET. It introduces the basic concepts, structure, working principle, applications, and brands and models of QFET.

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FQPF7N10L is a N-channel enhancement mode power field effect transistor produced by Fairchild, using planar stripe DMOS technology, which has the characteristics of low on-state resistance, high switching speed and high surge energy. It is suitable for low voltage applications such as high efficiency DC/DC converters and DC motor control.

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FQPF7N10L is a N-channel enhancement mode power field effect transistor produced by Fairchild, using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse endurance in avalanche and commutation modes. It is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

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FQPF7N10 is a 100V N-Channel MOSFET produced by Fairchild. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

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FQPF70N10 is a 100V N-channel MOSFET manufactured by Fairchild Semiconductor. This device has low on-state resistance, low gate charge, fast switching, 100% avalanche tested, improved dv/dt capability, and is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

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FQPF70N10 is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor using its proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

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This document describes the features and characteristics of the FQPF70N08 80V N-Channel MOSFET. These transistors are produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. They are suitable for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.

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FQPF70N08 is an N-channel enhancement mode power field-effect transistor manufactured by Fairchild using Fairchild's proprietary planar stripe DMOS technology, featuring low on-state resistance, superior switching performance and high-energy pulse endurance, suitable for automotive and other low-voltage applications.

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This document describes the features and characteristics of the FQPF6P25 250V P-Channel MOSFET produced by Fairchild Semiconductor International. These power field effect transistors are made using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. They are suitable for high efficiency switching DC/DC converters.

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FQP6N90C/FQPF6N90C is a high-performance N-channel enhancement mode power field effect transistor produced by Fairchild. This device uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, fast switching and 100% avalanche testing, making it suitable for high efficiency switch mode power supplies.

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This document describes the features of the FQPF6N90 N-Channel enhancement mode power field effect transistor, including minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

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FQPF6N90 is a 900V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is well suited for high efficiency switch mode power supply.

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The FQP6N80C/FQPF6N80C 800V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation. It has low on-state resistance, high switching performance, and can withstand high energy pulses.

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