INFINEON Manuals (Industrial)

The SMBD914/MMBD914 is a Schottky diode from ON Semiconductor. It features a high breakdown voltage and low reverse current, making it suitable for high-speed switching applications. The maximum rated reverse voltage is 100 volts and the maximum rated forward current is 250 milliamps.

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SMBD7000/MMBD7000 is a silicon switching diode array for high-speed switching applications. It has a reverse voltage of 100V, peak reverse voltage of 100V, and forward current of 200mA.

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The BSA 223SP is a P-channel enhancement mode Super Logic Level MOSFET with 150°C operating temperature, 2.5V rated, Avalanche rated, dv/dt rated.

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This product is an N-channel enhancement mode power transistor with automotive AEC Q101 qualification, MSL1 high temperature reflow, 175°C operating temperature, green environmental protection package and other features

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IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS®-T power transistors feature low on-resistance, automotive AEC Q101 qualification, and high temperature operation.

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IPB15N03L is an N-channel low-resistance power MOSFET with a rated drain voltage of 30 V and a maximum on-resistance of 12.6 mΩ, suitable for fast switching buck converters

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IPB14N03LA IPI14N03LA, IPP14N03LA are ideal N-channel logic level power transistors for high-frequency dc/dc converters, with excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), superior thermal resistance and 175 °C operating temperature.

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IPB10N03L is a logic level N-channel low voltage switch device produced by Infineon, which has the characteristics of low on-resistance, excellent gate charge x on-resistance product (FOM), superior thermal resistance, 175°C operating temperature, avalanche rated, dv/dt rated, and is ideal for fast switching buck converters.

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This document describes the features of IPB09N03LA, IPI09N03LA, and IPP09N03LA OptiMOS®2 power transistors, including their suitability for high-frequency DC/DC converters, N-channel, logic level, excellent gate charge x RDS(on) product (FOM), very low on-resistance, superior thermal resistance, 175°C operating temperature, and dv/dt rating.

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The characteristics of IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 power transistor include N-channel, normal level, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), 175 °C operating temperature, lead-free lead plating; RoHS compliant, qualified according to JEDEC1) for target application, ideal for high-frequency switching and synchronous rectification.

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This document describes the features and characteristics of the IPP07N03L and IPB07N03L OptiMOS Buck converter series products released on October 17, 2002. These products are N-channel logic level MOSFETs with low on-resistance, excellent gate charge x on-resistance product, superior thermal resistance, 175°C operating temperature, avalanche rated, and dv/dt rated. They are ideal for fast switching buck converters.

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This document describes the features and characteristics of IPB05N03LA, IPI05N03LA, and IPP05N03LA OptiMOS®2 power transistors, including their suitability for high-frequency dc/dc converters, excellent gate charge x R DS(on) product, very low on-resistance, superior thermal resistance, and 175°C operating temperature.

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This document provides technical parameters of IPP05N03L and IPB05N03L.

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The IPB04N03LA is a N-channel power MOSFET from Infineon that features high-frequency dc/dc converters, logic level, very low on-resistance, excellent thermal resistance, etc.

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This document introduces the features and characteristics of the two products IPP04N03L and IPB04N03L, including their maximum ratings, electrical characteristics, thermal characteristics, etc.

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The document introduces three models of OptiMOS®2 power transistors: IPB03N03LA, IPI03N03LA, and IPP03N03LA. These transistors are ideal for high-frequency dc/dc converters and have excellent gate charge and on-resistance, as well as superior thermal resistance. They have an operating temperature of 175°C and are rated for reverse diode dv/dt. The document also provides parameter and package information for each model.

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BC817 and BC818 are NPN silicon AF transistors, suitable for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. There are also complementary types BC807 and BC808 (PNP).

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BC817UPN is a NPN/PNP Silicon Transistor Array, for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, and two (galvanic) internal isolated NPN/PNP Transistors in one package.

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BC817U is a NPN silicon transistor array designed for AF input stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and two internally isolated transistors with good matching in one package.

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BC817W, BC818W are NPN silicon AF transistors for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. The complementary types are BC807W, BC808W (PNP).

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