Siemens Manuals (Industrial)

LS 3386, LA 3386, LO 3386, LY 3386 are Hyper 3 mm (T1) LED, Diffused Hyper-Bright, Wide-Angle LED.

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The data table is a parameter specification table for LED products, including LS 3369, LY 3369, LG 3369, features include high brightness, low current, can be used as optical indicators

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This document provides the characteristics information of Hyper-Bright LED LS 3366, LA 3366, LO 3366 LY 3366, including product features, model, color, light intensity, etc.

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The SMBD6100 is a high-voltage switch diode produced by Texas Instruments. Its maximum reverse voltage is 70 volts, maximum forward current is 200 milliamperes, and maximum operating temperature is 150 degrees.

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This document describes the maximum ratings and electrical characteristics of SMBD 2837 and SMBD 2838 silicon switching diode arrays. These diodes are suitable for high-speed switching applications and have a common cathode structure.

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This document provides the maximum ratings of the Silicon Switching Diode Array SMBD 2835 and SMBD 2836 from Semiconductor Group 1, including reverse voltage, forward current, junction temperature, total power dissipation, storage temperature range, peak reverse voltage, surge forward current, and thermal resistance. The electrical characteristics of SMBD 2835 and SMBD 2836 at 25˚C are also provided, such as breakdown voltage, reverse current, reverse recovery time, and forward voltage.

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The product is a 1300nm laser with a multi-quantum well structure, suitable for fiber optic networks, with a maximum output power of 2mW and supporting data rates of 1Gbit/s.

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This file introduces the DLR 5735/5736 series and DLG 5735/5736 series light emitting diode (LED) alphanumeric displays. The displays are 5x7 dot matrix, compatible with ASCII and EBCDIC formats, and well suited for use in keyboard verifiers, computer peripheral equipment, and other applications requiring an alphanumeric display. They are stackable both horizontally and vertically to generate large alphanumeric or even graphic displays.

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This document describes the features and characteristics of the DLO4135/7135 and DLG4137/7137 series products, including high efficiency, single character, and 5x7 dot matrix intelligent display.

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The DLR/DLO/DLG3416 is a four character 5x7 dot matrix display module with a built-in CMOS integrated circuit. This display is a “drop-in” replacement for the DL3416. The integrated circuit contains memory, ASCII ROM decoder, multiplexing circuitry and drivers. Data entry is asynchronous and can be random. A dis- play system can be built using any number of DLX3416s since each charac- ter can be addressed independently and will continue to display the character last stored until replaced by another. System interconnection is very straightforward. The least significant two address bits (A0 and A1) connect to the parallel data interface. A0 connects to the data interface’s D0 pin, and A1 connects to D1 pin.

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DLR2416 is a four-digit 5x7 dot matrix display module with a built-in CMOS integrated circuit. This display is X/Y stackable. The integrated circuit contains memory, ASCII ROM decoder, multiplexing circuitry and drivers. Data entry is asynchronous and can be random. A display system can be built using any number of DLR2416s since each digit can be addressed independently and will continue to display until the next data entry.

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The document introduces the BFT 93 PNP Silicon RF Transistor from Semiconductor Group. This transistor is suitable for low distortion broadband amplifiers up to 1 GHz, with collector currents ranging from 2mA to 20mA. It has a maximum rated collector-emitter voltage of 12V and a collector current of 35mA. The document also provides the electrical characteristics of the transistor.

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This document describes the features and characteristics of the BFT 92W PNP Silicon RF Transistor, which is suitable for broadband amplifiers up to 2GHz with collector currents up to 20mA.

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