MITSUBISHI Manuals

This document presents the electrostatic discharge test results for RA30H4552M1 and RA30H4047M1. It explains that these two products use MOS FET devices, which have lower surge endurance compared to silicon bipolar devices and may burn out when exposed to static electricity or surges.

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This application note describes the electrostatic discharge test results for RA60H4452M1 and RA60H4047M1.

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This document is an application note for silicon RF power semiconductors, describing the top view of the test fixture for the RA series (H2S/H2M outline) and the top view of the test fixture with a 6-pin type RF module.

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This application note describes the recommended method of applying thermal compound to MITSUBISHI RA series RoHS compliance products.

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This application note shows the test results of the electro static discharge level for MITSUBISHI RF Power Modules RA-series products

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This application note shows the reliability concept and reliability level for Silicon RF products.

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This application note provides precautions and recommendations for Mitsubishi Electric's Silicon RF Power Semiconductors.

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This document introduces the features and characteristics of Mitsubishi Electric's third generation intelligent power modules.

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This document describes the features of using Mitsubishi IGBT modules, including their ruggedness, low loss, and ease of use. Advanced processing technologies are utilized to achieve low on-state saturation voltages while maintaining high switching speed for 20kHz operation. The document also explains the structure and operation of IGBT modules and provides a comparison with MOSFET and BJT devices.

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This document introduces general application considerations for Mitsubishi H-Series IGBT and intelligent power modules, including power circuit design, snubber design and thermal design.

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This is a three-phase inverter module suitable for photovoltaic power generation systems and fuel cell systems

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Mitsubishi Industrial Color TFT-LCD Module 'DIAFINE' is a high-performance LCD display module suitable for various devices and machines. It features optimal design, high reliability, and real color display.

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This manual introduces the features and characteristics of the MITSUBISHI SiRF series RF power amplifier products.

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This document describes the features and characteristics of the Transistor-Array series products, as well as their use in various applications. The product range offers a wide range of options to help reduce the size and weight of application sets. It is widely used in vending machines, sequencers, measurement instruments, elevators, air-conditioners, fan heaters, washing machines, refrigerators, hot water dispensers, and more. The document also provides detailed information on the product's function reference, circuit/pin connection, thermal derating factor characteristics, and application examples.

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The HVIC series from Mitsubishi meets the user needs for driving power MOSFET/IGBT power devices. With advanced high-voltage process technology and drive protection circuit technology, Mitsubishi accurately transmits microcomputer control signals to power MOSFET/IGBT with high speed and reliability, without the need for a photo-coupler. The HVIC series offers high performance and integration.

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Mitsubishi Electric power devices meet demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product line-up. Industrial use, traction, home appliances . wherever electric power or motor control is needed, we have the means and tools to respond, including the industry's first DIPIPMsTM (Dual-In-line Package Intelligent Power Modules), and the HVIPMs (High-voltage Intelligent Power Modules). State-of-the-art technology pursuing energy-savings and environmental protection.

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This document mainly introduces the application of IPM and the characteristics and advantages of ST's DIPIPMTM series products

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