MITSUBISHI Manuals

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RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

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This application note shows the RF wide-band characteristics data (Frequency characteristics, Pin vs. Pout characteristics, Pout vs. Vdd characteristics ) at f=400 to 527MHz

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This application note shows the RF Wide band characteristics data (Pout vs. Frequency characteristics, Pout vs. Pin characteristics) at 800-900 MHz Band.

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This application note shows the RF Wide band characteristics data of RD01MUS1 and RD07MUS2B 2-Stage amplifier at f=763-870MHz,Vdd=7.2V

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This application note shows the RF wide band characteristics data (Frequency characteristics, Pout vs. Pin characteristics) at 763 to 870 MHz band.

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This is a Silicon RF Power Semiconductors application note, which introduces the performance data of RD07MUS2B TETRA single-stage amplifier at f=350-400MHz, Vdd=7.2V.

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This application note shows the RF wide band characteristics data (Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 380 to 470 MHz band.

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This is an application note about the RF wide band characteristics data (Frequency characteristics, Pout vs. Pin characteristics) at 400 to 470 MHz band of RD07MUS2B

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This application note shows the RF wide band characteristics data (Frequency characteristics, Pout vs. Pin characteristics) at 135 to 175 MHz band.

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This document shows the RF performance characteristics of the RD01MUS2 single-stage amplifier at the 450-527 MHz band, including the relationship between output power and input power.

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This is an application note for RD01MUS1 RF characteristics, which introduces the RD01MUS1 RF characteristics

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This application note shows the RF characteristics (Frequency Characteristics and Pin vs. Pout characteristics) data with RD00HVS1 using Broad-Band Fixture and a schematic for test fixture.

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This application note shows the RF wide-band characteristics data (Frequency characteristics, Pout vs. Pin characteristics, Pout vs. Vdd characteristics) at f=135 to 175MHz

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This document is an application note for silicon RF power semiconductors, which presents the RF performance of the RD02MUS1B single-stage amplifier at a frequency range of 400 to 470MHz. The document includes data on frequency characteristics, Pin vs. Pout characteristics, Pout vs. Vdd characteristics, and Pout vs. Idq characteristics.

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This application note shows recommendation device mount method & precaution for RD07&RD02 series.

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This application note shows the test results of surge tolerance for RD-series.

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This is a technical document for the silicon RF power semiconductors RA45H8994M1 and RA45H7687M1. It includes AM-AM, AM-PM and Vgg2-PM measurement results.

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This document describes the output power control method for RA45H7687M1.

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