MITSUBISHI ELECTRIC SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES Manual

Update: 29 September, 2023

This document describes the features of using Mitsubishi IGBT modules, including their ruggedness, low loss, and ease of use. Advanced processing technologies are utilized to achieve low on-state saturation voltages while maintaining high switching speed for 20kHz operation. The document also explains the structure and operation of IGBT modules and provides a comparison with MOSFET and BJT devices.


Brand: MITSUBISHI

File format: PDF

Size: 313 KB

MD5 Checksum: 78F185727407E71E18F6C226DC08324F

Publication date: 21 March, 2012

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PDF Link: MITSUBISHI ELECTRIC SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES Manual PDF

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