IXYS Manuals (Industrial)

This document is the datasheet of IXYS VUO 105-12NO7 1200V 140A bridge rectifier. It mainly introduces the features and characteristics of the product, including maximum current, rated voltage, package type, impedance, rated current, etc.

File format: PDF Size:75 KB

This data sheet provides the characteristics parameters of IXYS IXSH series 600V IGBT.

File format: PDF Size:120 KB

IXTU01N80 is a high voltage MOSFET produced by IXYS company. Its features are international standard JEDEC TO-251 AA, TO-252 AA packages, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and fast switching times.

File format: PDF Size:66 KB

30N60P is a N-channel enhancement mode avalanche rated power MOSFET produced by IXYS. Its maximum voltage is 600V, the maximum current is 30A, and the on-resistance is less than 240mΩ. The product has the characteristics of fast recovery diode, unclamped inductive switching (UIS) rating, international standard packages, and low package inductance.

File format: PDF Size:395 KB

This document describes the features and characteristics of the PolarHVTM Power MOSFET IXTQ 36N50P produced by IXYS, including international standard packages, Unclamped Inductive Switching (UIS) rating, low package inductance, etc.

File format: PDF Size:138 KB

IXTQ 64N25P is a N-channel enhancement mode power MOSFET from IXYS. Its maximum rated voltage is 250V, maximum current is 64A, and typical RDS(on) is 48mΩ.

File format: PDF Size:574 KB

IXTQ 69N30P is a N-Channel Enhancement Mode Power MOSFET with VDSS = 300 V, ID25 = 69 A and RDS(on) = 49 mΩ. It features international standard packages, unclamped inductive switching (UIS) rating and low package inductance.

File format: PDF Size:105 KB

01N100 is a high voltage MOSFET produced by IXYS. Its features are international standard package JEDEC TO-251 AA, low RDS(on), rugged polysilicon gate cell structure and fast switching times.

File format: PDF Size:63 KB

File format: PDF Size:253 KB

The document describes symbol test conditions and maximum ratings, as well as the features and characteristics of a high voltage MOSFET device.

File format: PDF Size:50 KB

IXTP 1R6N50P is a N-Channel Enhancement Mode power MOSFET produced by IXYS. Its main features include international standard packaging, unclamped inductive switching (UIS) rating, low package inductance, easy to drive and protect.

File format: PDF Size:115 KB

This is a N-Channel Enhancement Mode MOSFET with a maximum voltage of 100V and a maximum current of 110A. Its typical impedance is 15 mΩ.

File format: PDF Size:575 KB

File format: PDF Size:0 KB

The document describes the N-channel enhancement mode power MOSFETs of TO-204 AA (IXTM) and TO-247 AD (IXTH) models produced by IXYS. The products feature low RDS(on), rugged polysilicon gate cell structure, and low package inductance. They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies, and DC choppers, among other applications.

File format: PDF Size:104 KB

This datasheet provides specifications of IXTH11P50N, including maximum ratings, characteristic values, characteristic curves, package and pin diagram, etc.

File format: PDF Size:570 KB

This data sheet provides the maximum ratings, characteristics, characteristics, applications and advantages of the 7P50 and 8P50 P-channel enhancement type avalanche rated standard power MOSFET.

File format: PDF Size:72 KB

This is a technical document about IXTK 120N25 VDSS = 250 V ID25 = 120 A product, which introduces the features and characteristics of the product, including low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, international standard package, fast switching time, etc.

File format: PDF Size:84 KB

IXTK 140N20P is a high performance N-channel enhancement mode power MOSFET. It has a maximum voltage of 200V and a maximum current of 140A. It has international standard packages, unclamped inductive switching (UIS) rating, low package inductance, etc., easy to drive and protect.

File format: PDF Size:560 KB

This datasheet is about IXTK 180N15's technical parameters, including maximum voltage, maximum current, minimum resistance.

File format: PDF Size:84 KB

This document describes the features and characteristics of IXYS' IXTK and IXTN series N-channel enhancement mode MOSFET products.

File format: PDF Size:136 KB