IXYS Manuals (Industrial)

IXYS IXFH 22N55 handbook

This is the datasheet for IXFH 22 N55, which is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET. Its maximum voltage is 550 V, continuous current is 22 A, and switching time is 250 ns.

File format: PDF Size:68 KB

IXYS IXFH 26N50P IXFV 26N50P IXFV 26N50PS handbook

26N50P is a N-channel MOSFET produced by IXYS. It has a maximum current of 26A, a minimum on-resistance of 230mΩ, and a maximum voltage of 500V.

File format: PDF Size:208 KB

IXYS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q handbook

IXFH/IXFT 24N50Q and 26N50Q are N-channel enhancement mode Avalanche Rated, Low Qg, High dv/dt power MOSFETs manufactured by IXYS.

File format: PDF Size:136 KB

IXYS IXFH 26N60/IXFT 26N60/IXFK 28N60 handbook

IXFH/IXFT IXFK are IXYS company's N-channel enhancement mode high dv/dt, low trr 600V power MOSFETs, with a maximum voltage of 600V and a maximum current of 26A/28A. It has a fast switching speed (trr is 250ns), and can be used in motor drives, switch power supplies and other applications.

File format: PDF Size:69 KB

IXYS IXFH 26N60Q IXFT 26N60Q handbook

This document is the datasheet of IXFH 26N60Q, introducing the features and characteristics of this product, including maximum ratings, characteristic values, package form, etc.

File format: PDF Size:105 KB

IXYS IXFH 28N50F IXFT 28N50F handbook

This document is a technical information document about IXYS' HiPerRFTM Power MOSFETs F-Class product. This product is a N-channel enhancement type avalanche rated, low Qg, low intrinsic Rg, high dV/dt, low trr RF power MOSFET.

File format: PDF Size:102 KB

IXYS IXFH16N90 XFX16N90 handbook

The document describes the features and characteristics of a product, including its performance, functions, etc.

File format: PDF Size:267 KB

IXYS IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q handbook

This document mainly introduces the features and characteristics of IXYS's Q-Class N-channel enhancement mode avalanche rated low Qg, high dv/dt power MOSFET products, including maximum ratings, characteristic values, packaging, installation dimensions, and typical application circuits.

File format: PDF Size:71 KB

IXYS IXFH20N80Q IXFK20N80Q IXFT20N80Q handbook

IXFH20N80Q and IXFK20N80Q are IXYS's N-channel enhancement mode avalanche rated, low Qg, high dv/dt power MOSFETs. The main features are low RDS (on) low Qg, avalanche energy and current rated, fast intrinsic rectifier, easy to mount, space saving, high power density.

File format: PDF Size:71 KB

IXYS IXFH 21N50Q IXFT 21N50Q handbook

This datasheet lists the maximum ratings, characteristic values, etc. of the IXFH type MOSFET device.

File format: PDF Size:558 KB

IXYS IXFH 13N80Q IXFT 13N80Q handbook

IXFH 13N80 is a N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Power MOSFET

File format: PDF Size:50 KB

IXYS IXFH 140N10P IXFT 140N10P handbook

IXFH 140N10P is a N-Channel Enhancement Mode Fast Intrinsic Diode, Avalanche Rated from IXYS with Unclamped Inductive Switching (UIS) rated, Low package inductance - easy to drive and to protect.

File format: PDF Size:114 KB

IXYS IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 handbook

The document describes the features and characteristics of IXYS' N-channel enhancement mode MOSFET products, including maximum ratings, maximum operating temperature, maximum current, etc.

File format: PDF Size:115 KB

IXYS IXFH14N100Q2 handbook

This document introduces the HiPerFETTM power MOSFET products from IXYS. The product features a double metal process for low gate resistance, international standard packages, and epoxy that meets UL 94 V-0 flammability classification. Additionally, the product has low RDS(on), low Qg, and is rated for voltage and current avalanche. It is suitable for various applications such as DC-DC converters, switched-mode and resonant-mode power supplies, and DC choppers.

File format: PDF Size:561 KB

IXYS IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q handbook

This datasheet provides information about IXFH 15N100Q, including maximum ratings, characteristic values, symbols, and packages.

File format: PDF Size:135 KB

IXYS IXFH14N80 IXFH15N80 handbook

14N80 and 15N80 are N-Channel Enhancement Mode high dv/dt, low trr, HDMOSTM family power MOSFETs produced by IXYS company. Their features include international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, fast intrinsic rectifier, applied to DC-DC converters, synchronous rectifiers, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor control, temperature and lighting controls, low voltage relays.

File format: PDF Size:97 KB

IXYS IXFH 15N80Q IXFT 15N80Q handbook

The document describes IXYS' high-power MOSFET products, including features and characteristics such as low RDS(on), easy mounting, space savings, high power density, etc.

File format: PDF Size:109 KB

IXYS IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 handbook

This data sheet lists the maximum ratings, characteristic values, package information, etc. of HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) TO-204 AA (IXFM).

File format: PDF Size:84 KB

IXYS IXFH/IXFM11N80 IXFH/IXFM13N80 handbook

IXFH/IXFM 11N80 and 13N80 are IXYS's high voltage N-channel enhancement mode power MOSFETs, with low RDS(on), high dv/dt and low trr characteristics, and TO-247 and TO-204 packages.

File format: PDF Size:94 KB

IXYS IXFH 12N100F IXFT 12N100F handbook

This document describes the features and characteristics of IXYS' HiPerRFTM Power MOSFETs, including RF capability, low gate resistance, avalanche rating, low package inductance, etc.

File format: PDF Size:97 KB

Brands



Products