INFINEON Manuals (Industrial)
Infineon PNP Silicon AF Transistors BC807W BC808W handbook
BC807W, BC808W are Infineon PNP silicon AF transistors, used for general AF applications, with high collector current, high current gain, low collector-emitter saturation voltage.
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Infineon PNP Silicon Transistor Array BC807U handbook
BC807U is a PNP Silicon Transistor Array for AF input stages and driver applications with high current gain, low collector-emitter saturation voltage and two (galvanic) internal isolated Transistors with good matching in one package
File format: PDF Size:44 KB
Infineon BC807/BC808 Manual
BC807, BC808 are PNP Silicon AF Transistors, which have high collector current, high current gain and low collector-emitter saturation voltage.
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Infineon BCV62 handbook
This document describes the features and characteristics of the BCV62 PNP Silicon Double Transistor. It can be used as a current mirror and has good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.
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Infineon BCV61 handbook
BCV61 is an NPN Silicon Double Transistor, To be used as a current mirror, with Good thermal coupling and VBE matching, High current gain and Low collector-emitter saturation voltage.
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infineon BCV29 BCV49 NPN Silicon Darlington Transistors handbook
BCV29, BCV49 are NPN silicon Darlington transistors with high collector current and high current gain.
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infineon BCV28 BCV48 NPN Silicon Darlington Transistors handbook
BCV28 and BCV48 are PNP silicon Darlington transistors designed for general AF applications. They have high collector current and high current gain. Complementary types BCV29 and BCV49 (NPN) are also available.
File format: PDF Size:47 KB
infineon BCW67 BCW68 handbook(1)
BCW67 and BCW68 are PNP silicon AF transistors for general AF applications. They have high current gain and low collector-emitter saturation voltage. The complementary types are BCW65 and BCW66 (NPN).
File format: PDF Size:49 KB
infineon BCW67 BCW68 handbook
BCW 67 BCW 68 are bipolar junction transistors with high current gain and low collector-emitter saturation voltage. They are suitable for general audio applications.
File format: PDF Size:49 KB
Infineon BCW65/BCW66 Manual
This document describes the features and characteristics of BCW65 and BCW66, including their applications in general AF, high current gain, low collector-emitter saturation voltage, etc. It also provides information about complementary types BCW67 and BCW68.
File format: PDF Size:49 KB
Infineon BCW61/BCX71 Manual
BCW61A is a type of silicon PNP transistor in the BCW61 series. This series of transistors has the characteristics of high current gain, low collector-emitter saturation voltage and low noise, and can be used in audio input stages and driver applications.
File format: PDF Size:88 KB
Infineon BAT165... handbook
BAT165 is a medium current Schottky rectifier diode for low-loss, fast-recovery, meter protection, bias isolation and clamping applications. It has a miniature plastic package for surface mounting (SMD).
File format: PDF Size:394 KB
Infineon BAT 68W handbook
The document describes the features and characteristics of BAT 68W silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.
File format: PDF Size:99 KB
Infineon BAT 68-08S handbook
BAT 68-08S is a silicon Schottky diode array designed for mixer applications in the VHF / UHF range and high-speed switching applications. It has a breakdown voltage of 8V, a maximum forward current of 130mA, a maximum junction temperature of 150℃, and a forward resistance of 10Ω.
File format: PDF Size:84 KB
Infineon BAT 68 handbook
This document describes the features and characteristics of the BAT 68 series silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.
File format: PDF Size:84 KB
Infineon BAT 66-05 handbook
BAT 66-05 is a Schottky diode from BAT company. Its maximum reverse voltage is 40 V, maximum forward current is 2 A, and maximum power dissipation is 1.2 W. BAT 66-05 is packaged in SOT-223 and can be used for low-loss, fast-recovery rectification, meter protection, bias isolation, and clamping.
File format: PDF Size:75 KB
Infineon BAT 64-07 handbook
BAT 64-07 is a Schottky diode from BAT company. It has the characteristics of low loss, fast recovery, meter protection, bias isolation and clamping applications. Its reverse voltage is 40V, the average forward current is 120mA, the surge forward current is 800mA, the total power dissipation is 250mW, the junction temperature is 150°C, and the storage temperature is -55~150°C.
File format: PDF Size:76 KB
Infineon BAT 64 handbook
The BAT 64 series are a range of silicon Schottky diodes for low-loss, fast-recovery, meter protection, bias isolation and clamping applications. These diodes feature integrated diffused guard rings and low forward voltages.
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Infineon BAT 63-07W handbook
BAT 63-07W is a silicon Schottky diode with a maximum reverse voltage of 3 V and a maximum forward current of 100 mA. This diode is suitable for high-frequency detection applications and high-speed switching applications.
File format: PDF Size:92 KB
Infineon BAT 62-08S handbook
This document describes a low barrier diode for detectors up to GHz frequencies. The product has a reverse voltage of 40V and a forward current of 2mA. Additionally, the document provides information on the pin configuration and package of the device.
File format: PDF Size:50 KB