Industrial Manuals

Comchip 2N7002-HF MOSFET

Features Power dissipation : 0.35W

File format:PDF Size:140 KB

Comchip 2N7002-G MOSFET

Features Power dissipation : 0.35W

File format:PDF Size:140 KB

Analog Power AM20N06-90D MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

File format:PDF Size:315 KB

Analog Power AM20P03-60D MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.

File format:PDF Size:168 KB

Analog Power AM20N10-250DE MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.

File format:PDF Size:114 KB

Analog Power AM20N20-125D MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

File format:PDF Size:306 KB

Analog Power AM20N10-250D MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters

File format:PDF Size:300 KB

Analog Power AM20N15-250B MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

File format:PDF Size:336 KB

Analog Power AM20N10-180D MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.

File format:PDF Size:214 KB

Analog Power AM20P02-60D MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

File format:PDF Size:167 KB

Analog Power AM20N06-90I MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

File format:PDF Size:348 KB

Analog Power AM20N10-350D MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

File format:PDF Size:318 KB

Analog Power AM20N10-130D MOSFET

Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

File format:PDF Size:318 KB

Analog Power AM20P02-99D MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.

File format:PDF Size:167 KB

NXP BUK7K52-60E MOSFET

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

File format:PDF Size:331 KB

NXP BUK7K18-40E MOSFET

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

File format:PDF Size:339 KB

NXP BUK9K134-100E MOSFET

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

File format:PDF Size:360 KB

NXP BUK9K17-60E MOSFET

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

File format:PDF Size:344 KB

NXP BUK9K25-40E MOSFET

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

File format:PDF Size:344 KB

NXP BUK9K32-100E MOSFET

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

File format:PDF Size:366 KB

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