Industrial Manuals
Comchip 2N7002-HF MOSFET
Features Power dissipation : 0.35W
File format:PDF Size:140 KB
Comchip 2N7002-G MOSFET
Features Power dissipation : 0.35W
File format:PDF Size:140 KB
Analog Power AM20N06-90D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format:PDF Size:315 KB
Analog Power AM20P03-60D MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.
File format:PDF Size:168 KB
Analog Power AM20N10-250DE MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.
File format:PDF Size:114 KB
Analog Power AM20N20-125D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format:PDF Size:306 KB
Analog Power AM20N10-250D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters
File format:PDF Size:300 KB
Analog Power AM20N15-250B MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format:PDF Size:336 KB
Analog Power AM20N10-180D MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.
File format:PDF Size:214 KB
Analog Power AM20P02-60D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format:PDF Size:167 KB
Analog Power AM20N06-90I MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format:PDF Size:348 KB
Analog Power AM20N10-350D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format:PDF Size:318 KB
Analog Power AM20N10-130D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format:PDF Size:318 KB
Analog Power AM20P02-99D MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.
File format:PDF Size:167 KB
NXP BUK7K52-60E MOSFET
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format:PDF Size:331 KB
NXP BUK7K18-40E MOSFET
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format:PDF Size:339 KB
NXP BUK9K134-100E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format:PDF Size:360 KB
NXP BUK9K17-60E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format:PDF Size:344 KB
NXP BUK9K25-40E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format:PDF Size:344 KB
NXP BUK9K32-100E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format:PDF Size:366 KB