SAMSUNG Manuals

File format: PDF Size:1812 KB

File format: PDF Size:0 KB

The document provides instructions on how to use the NeXus player and XM Mini-Tuner. The NeXus player can be used in the car and at home by carrying it between installations along with the Mini-Tuner. The player allows for listening to live XM broadcasts, recorded XM broadcasts, and WMA/MP3 files.

File format: PDF Size:307 KB

File format: PDF Size:1751 KB

GT-I9100 user manual is a Samsung mobile phone user guide that provides information on the product's features and usage methods

File format: PDF Size:5889 KB

File format: PDF Size:906 KB

File format: PDF Size:274 KB

File format: PDF Size:324 KB

KM6164002 is a CMOS SRAM product with high performance and reliability. It is designed with low power consumption and suitable for various applications.

File format: PDF Size:108 KB

KM416V4004C,KM416V4104C CMOS DRAM is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. This family offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

File format: PDF Size:487 KB

This datasheet provides the specifications of K6F4016U4G series products, including operating temperature range, voltage range, speed, power consumption, package type, standby current, operating current, etc.

File format: PDF Size:126 KB

K4M56323LE is a synchronous high data rate Dynamic RAM fabricated with SAMSUNG's high performance CMOS technology. It has various features and functions, including LVCMOS compatibility, four banks operation, MRS cycle, and EMRS cycle.

File format: PDF Size:141 KB

The K4M511533E - Y(P)C/L/F is a synchronous high data rate dynamic random access memory released by Samsung. Its capacity is 536,870,912 bits, organized as 4 x 8,388,608 words x 16 bits, and manufactured with Samsung's high performance CMOS technology. The device adopts a synchronous design, which allows precise cycle control by using the system clock, and I/O transactions are possible on every clock cycle. The device supports a variety of operating frequencies, programmable burst lengths and programmable latencies, making it suitable for a variety of high bandwidth and high performance memory system applications.

File format: PDF Size:105 KB

This is a technical specification document for 512Mb C-die DDR SDRAM 66 TSOP-II with Pb-Free (RoHS compliant)

File format: PDF Size:360 KB

This document is a DDR SDRAM 4GB Registered DIMM specification, which mainly introduces the product's features and characteristics, including product composition, working frequency, density, organization structure, component composition, height, speed, etc.

File format: PDF Size:178 KB

File format: PDF Size:0 KB

This document provides specifications and features of OneNAND256 flash memory, including different models with voltage, temperature range, and packaging options.

File format: PDF Size:1228 KB

This document introduces the specifications of three Samsung OneNAND flash memory products (1GB, 2GB and 4GB)

File format: PDF Size:1592 KB

LT104S1-101 is a voltage reference produced by LT company. It has high accuracy, low noise, low power consumption, high stability and other characteristics.

File format: PDF Size:1031 KB

File format: PDF Size:32 KB