Fairchild Manuals

FAIRCHILD FDP8870 N-Channel PowerTrench MOSFET 30V 156A 4.1m handbook

FDP8870 is a N-Channel MOSFET manufactured by Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a rated current of 156A. Its features are low on-resistance (4.1mΩ) and fast switching speed.

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FAIRCHILD FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET handbook

This document describes an N-Channel Logic level power MOSFET specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications, making them easier and safer to drive (even at very high frequencies), and enabling DC/DC power supply designs with higher overall efficiency.

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FAIRCHILD FDP75N08 75V N-Channel MOSFET handbook

This document describes the features and characteristics of the FDP75N08 75V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 75A current, 0.011Ω RDS(on), low gate charge, and low Crss.

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FAIRCHILD FDP7045L/FDB7045L handbook

This document is about the parameters of two MOSFET models FDP7045L and FDB7045L

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FAIRCHILD FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET handbook

FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET is a low RDS(ON), low gate charge, high switching speed N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. It adopts TO-220 FDP series and TO-263AB FDB series package.

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FAIRCHILD FDP7030L FDB7030L handbook

FDP7030L and FDB7030L are Fairchild's high density DMOS N-Channel logic level enhancement mode power field effect transistors. These devices are particularly suited for low voltage applications such as DC/DC converters and switch mode power supplies.

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FAIRCHILD FDP6670S/FDB6670S handbook

FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET™ is a 30V MOSFET designed by Fairchild Semiconductor Corporation with low RDS(ON) and low gate charge, suitable for synchronous DC:DC power supplies as a low-side switch.

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FAIRCHILD FDP6676S FDB6676S handbook

This document is the datasheet of FDP6676S/FDB6676S, which introduces the features of the product, including product model, package, pin, typical application circuit, characteristic parameters, etc.

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FAIRCHILD FDP6690S/FDB6690S handbook

FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET™ is a N-channel MOSFET designed for synchronous DC:DC power supplies. This MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

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FAIRCHILD FDP6670AS/FDB6670AS handbook

FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ is a MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

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FAIRCHILD FDP6670AL/FDB6670AL handbook

FDP6670AL/FDB6670AL is a logic level MOSFET that features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. It is optimized for low gate charge, low RDS(ON) and fast switching speed.

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FAIRCHILD FDP6644S/FDB6644S handbook

This document describes a 30V N-channel power MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It features low RDS(ON) and low gate charge to maximize power conversion efficiency. Additionally, the MOSFET includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

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FAIRCHILD FDP6644/FDB6644 handbook

This document is about FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET datasheet. The device has 50A, 30V, RDS(ON) = 8.5 mΩ @ VGS = 10 V, RDS(ON) = 10.5 mΩ @ VGS = 4.5 V, low gate charge (27 nC typical), fast switching speed, high performance trench technology, for extremely low RDS(ON) DC/DC power supply designs.

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FAIRCHILD FDP61N20 handbook

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FAIRCHILD FDP603AL FDB603AL handbook

FDP603AL/FDB603AL are Fairchild's N-Channel logic level enhancement mode power field effect transistors with extremely low RDS(ON) and maximum junction temperature of 175°C.

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FAIRCHILD FDP6035L/FDB6035L handbook

FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor is a low voltage application N-channel logic level enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. Its features are low on-state resistance, fast switching speed, low inline power loss and resistance to transients.

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FAIRCHILD FDP6035AL/FDB6035AL handbook

FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET is a N-Channel Logic Level MOSFET launched by Fairchild Semiconductor Corporation. It has 48 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V, RDS(ON) = 14 mΩ @ VGS = 4.5 V, Critical DC electrical parameters specified at elevated temperature, High performance trench technology for extremely low RDS(ON), 175°C maximum junction temperature rating features.

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FAIRCHILD FDP6030L FDB6030L handbook

FDB6030L is a N-channel logic level enhancement mode power field effect transistor produced by Fairchild. It features low gate charge (typical 34 nC), low Crss (typical 175 pF) and fast switching speed. This device is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

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FAIRCHILD FDP6030BL/FDB6030BL handbook

FDP6030BL/FDB6030BL is an N-Channel Logic Level PowerTrench MOSFET with a rating of 40A, 30V. It features high performance trench technology for extremely low RDS(ON) and has a maximum junction temperature rating of 175°C.

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