NXP BUK9E3R2-40B TrenchMOS

Update: 25 September, 2023

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.


File format: PDF

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MD5 Checksum: 57C5F28F8A5DF826FC12D2AC7F9C5D26

Publication date: 23 May, 2014

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PDF Link: NXP BUK9E3R2-40B TrenchMOS PDF

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