SIEMENS HYB 3164160T -50/-60 HYB 3165160T -50/-60

Update: 30 September, 2023

This is a 4M x 16-bit dynamic random access memory (DRAM) that is fabricated using the most advanced 64Mbit CMOS silicon gate process technology. It has high performance and low power dissipation.

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Brand: Siemens

File format: PDF

Size: 368 KB

MD5 Checksum: 9301AF599A5B07B0AADE72928BE55A7E

Publication date: 12 June, 2012

Downloads: -

PDF Link: SIEMENS HYB 3164160T -50/-60 HYB 3165160T -50/-60 PDF