SIEMENS HYB3117805BSJ-50/-60/-70 Data Sheet

Update: 30 September, 2023

The HYB3117805BSJ-50/-60/-70 2M x 8-EDO DRAM is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The device utilizes a submicron CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins both internally and for the system user. Multiplexed address inputs permit the HYB3117805BSJ to be packaged in a standard SOJ 28 plastic package with 400 mil width. These packages provide high system bit densities and are compatible with commonly used automatic test and in-line test equipment.

Brand: Siemens

File format: PDF

Size: 259 KB

MD5 Checksum: 18D9FF2806A203E60076ED1FC720A09B

Publication date: 11 June, 2012

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PDF Link: SIEMENS HYB3117805BSJ-50/-60/-70 Data Sheet PDF

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