VISHAY SiC769CD Manual
The SiC769CD is an integrated DrMOS power stage from Vishay Siliconix. It integrates PWM-optimized N-channel MOSFETs (high side and low side) and a full-featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC769CD delivers up to 35 A continuous output current and operates from a 3 V to 16 V input voltage range. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input voltage of 12 V. The device can also deliver very high power at 5 V output for ASIC applications. The SiC769CD incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller and converts it into the high side and low side MOSFET gate drive signals. The driver IC is designed to implement the skip mode (SMOD) function for light load efficiency improvement. Adaptive dead time control also works to improve efficiency at all load points. The SiC769CD has a thermal warning (THDN) that alerts the system of excessive junction temperature. The driver IC includes an enable pin, UVLO and shoot through protection. The SiC769CD is optimized for high frequency buck applications. Operating frequencies in excess of 1 MHz can easily be achieved. The SiC769CD is packaged in Vishay Siliconix high performance PowerPAK MLP6 x 6 package. Compact co-packaging of components helps to shorten design cycle and reduce total cost.
Brand: VISHAY
File format: PDF
Size: 383 KB
MD5 Checksum: 9B8D9B6228982147D46C619F1FDC7C7D
Publication date: 11 April, 2012
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PDF Link: VISHAY SiC769CD Manual PDF