Philips Manuals (Industrial)

PHILIPS BSH205 handbook

BSH205 is a low threshold voltage, fast switching P-channel enhancement mode MOS transistor from Philips Semiconductors. It is suitable for battery powered applications and high speed digital interfacing.

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PHILIPS BSH203 handbook

The BSH203 is a P-channel enhancement mode MOS transistor with very low threshold voltage and fast switching, making it ideal for battery powered applications and high-speed digital interfacing.

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PHILIPS BSH202 handbook

This document describes the features and characteristics of the Philips Semiconductors P-channel enhancement mode BSH202 MOS transistor. The transistor has a low threshold voltage, fast switching speed, and logic level compatibility, making it ideal for battery-powered applications and high-speed digital interfacing.

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PHILIPS BSH201 handbook

The Philips BSH201 MOS transistor is a P-channel enhancement mode field-effect power transistor with low threshold voltage, fast switching and logic level compatibility. It is ideal for battery powered applications and high speed digital interfacing.

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PHILIPS BSH121 handbook

The BSH121 is a N-channel enhancement mode field-effect transistor manufactured by Philips Semiconductors. It uses TrenchMOS technology and features very fast switching, low threshold voltage and a small surface mount package. It can be used for battery management, high speed switching and logic level translation applications.

File format: PDF Size:110 KB

PHILIPS BSH114 handbook

BSH114 is an N-channel enhancement mode field effect transistor produced by NXP Semiconductors. It uses TrenchMOS™1 technology and has low on-state resistance, very fast switching speed and surface mount package. The applications include relay driver, DC/DC converter, general purpose switch, etc.

File format: PDF Size:104 KB

PHILIPS BSH112 handbook

BSH112 is a N-channel enhancement mode field-effect transistor produced by PHILIPS, using TrenchMOS technology, with very fast switching speed, logic level compatibility, subminiature surface mount package, gate-source ESD protection diodes and other features.

File format: PDF Size:113 KB

PHILIPS BSH111 handbook

BSH111 is an N-channel enhancement mode field-effect transistor produced by NXP Semiconductors, using TrenchMOS™ technology, with very fast switching speed, low threshold voltage and subminiature surface mount package. It can be used in battery management, high speed switch and logic level translator.

File format: PDF Size:96 KB

PHILIPS BSH108 handbook

BSH108 is an N-channel enhancement mode field-effect transistor. It uses TrenchMOS™1 technology and has a very fast switching speed. It can be used for battery management, high speed switch, low power DC to DC converter and other applications.

File format: PDF Size:132 KB

PHILIPS BSH107 handbook

BSH107 is an N-channel enhancement type MOS transistor produced by Philips Semiconductors. This product has a very low threshold voltage and extremely fast switching speed, making it ideal for battery powered applications and high speed digital interfacing. BSH107 is supplied in the SOT457 miniature surface mounting package.

File format: PDF Size:155 KB

PHILIPS BSH106 handbook

BSH106 is a N-channel enhancement mode MOS switch transistor produced by Philips Semiconductors. It has a very low threshold voltage, fast switching speed, logic level compatibility and a subminiature surface mount package. It is suitable for battery powered applications and high speed digital interfacing.

File format: PDF Size:149 KB

PHILIPS BSH105 handbook

The BSH105 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. It features very low threshold voltage, fast switching and logic level compatibility. It is suitable for battery powered applications and high speed digital interfacing.

File format: PDF Size:148 KB

PHILIPS BSH104 handbook

BSH104 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. It has the characteristics of high speed switching, no secondary breakdown, direct interface to C-MOS, TTL, etc., and very low threshold. It can be widely used in power management, DC to DC converters, general purpose switches and battery powered applications.

File format: PDF Size:51 KB

PHILIPS BSH102 handbook

The BSH102 is a N-channel enhancement mode MOS transistor manufactured by Philips Semiconductors. It features a very low threshold, high-speed switching, and no secondary breakdown. It is suitable for use in power management, DC to DC converters, battery powered applications, and as a general purpose switch.

File format: PDF Size:101 KB

PHILIPS BSH101 handbook

BSH101 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. The product has very low threshold, high speed switching and no secondary breakdown, and is suitable for power management, DC to DC converters, battery powered applications and other occasions.

File format: PDF Size:642 KB

PHILIPS BSH103 handbook

BSH103 is a N-channel enhancement mode MOS transistor, with low threshold, high-speed switching, no secondary breakdown, etc. It is mainly used in power management, DC to DC converters, battery-powered applications, glue-logic, interface between logic blocks and periphery, general purpose switch, etc.

File format: PDF Size:100 KB

PHILIPS 2PD602A handbook

This document describes the features and characteristics of the 2PD602A NPN general purpose transistor, including high current and low voltage, suitable for general switching and amplification applications.

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PHILIPS 2PD601AW handbook

2PD601AW is a general purpose NPN type transistor produced by PHILIPS. It features high collector current (max. 100mA) and low collector-emitter saturation voltage (max. 500mV). It is suitable for general switching and amplification applications. The product is packaged in SC-70 (SOT323) plastic package and the PNP complementary model is 2PB709AW.

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PHILIPS 2PD601A handbook

2PD601A is a NPN general purpose transistor produced by Philips Semiconductors. This transistor has the characteristics of low current (maximum 100mA) and low voltage (maximum 50V). It is mainly used for general purpose switching and amplification.

File format: PDF Size:45 KB

PHILIPS 2PD2150 handbook

The product is a low-voltage, high-current NPN type transistor produced by PHILIPS. Its package form is SOT89, and it is used in DC-DC conversion, MOSFET gate driving, motor control, charging circuits, power switches, etc.

File format: PDF Size:60 KB

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