INFINEON Manuals (Industrial)

SPI21N10 SPP21N10,SPB21N10 is a N-channel enhancement mode power MOSFET from Dinghao. Its maximum continuous drain current is 21A, maximum drain-source voltage is 100V, and maximum junction temperature is 175°C.

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SPI21N10 SPP21N10,SPB21N10 SIPMOS   Power-Transistor Product Summary is a N-Channel Enhancement mode power transistor. Its maximum working voltage is 100V, maximum drain current is 21A, and maximum on-resistance is 80mΩ. Its working temperature range is -55~+175℃.

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This document presents the technical specifications and features of the SPP20N65C3, SPA20N65C3, and SPI20N65C3 Cool MOS™ power transistors from Dinghao. These products feature high voltage technology, best-in-class RDS(on) in TO 220 package, ultra-low gate charge, high peak current capability, and improved transconductance.

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SPP20N60S5/SPB20N60S5 is a high voltage power transistor with RDS(on) of 0.19 ohms, ID of 20 A, and TO220 and TO263 packages.

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This document introduces the features and characteristics of two Cool MOS™ power transistors, SPP20N60S5 and SPB20N60S5, including new high voltage technology, best RDS(on) in TO 220 package, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

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This document describes the features and characteristics of the SPP20N60CFD Cool MOS™ power transistor, including the worldwide best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, intrinsic fast-recovery body diode, etc.

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SPP20N60CFD Cool MOS™ Power Transistor, rated maximum voltage 650V, on-resistance 0.22 ohms, continuous current 20.7 amperes, pulse current 52 amperes, reverse recovery charge is extremely low.

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New generation high voltage power MOSFET, RDS(on) as low as 0.19 Ohms, ID up to 20.7 A, used in various high voltage switching power supplies, DC/DC converters and other occasions.

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The TLE4263-2ES is a low dropout voltage regulator that provides a 5V output voltage, and is suitable for automotive electronics and other applications.

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TLE 4252 is a low-drop voltage tracking regulator with output tracking tolerance and output voltage adjustment. It has an output current capability of 250 mA and can operate in a wide temperature range from -40°C to 150°C. In addition, it has functions such as short circuit protection, reverse polarity protection, and overtemperature protection. The regulator is designed to supply off-board systems in automotive applications.

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TLE4226G is an integrated, sixfold low-side power switch from Texas Instruments with power limiting of the 0.5 A outputs, shorted-load protection of the 50 mA switches and Z-diodes on all switches from output to ground. TLE4226G is particularly suitable for automotive and industrial applications.

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This is a datasheet for TLE4209G. The datasheet provides detailed information about the overview, block diagram, pin configuration and general product characteristics of the product.

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TLE4209 is a H-Bridge Driver designed specifically for automotive headlight beam control and industrial servo control applications. It is built using Infineons bipolar high voltage power technology DOPL and available in a P-DIP-8-4 package.

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This data sheet introduces the features of TLE4209 DC motor driver.

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The TLE 4208 is a fully protected Quad-Half-Bridge-Driver designed specially for automotive and industrial motion control applications. It has the capability to drive up to 3 motors with a continuous output current of up to 0.8A. Additionally, it features low quiescent current consumption, low saturation voltage, output short circuit protection, overvoltage lockout and diagnosis, undervoltage lockout, CMOS/TTL compatible inputs, and more.

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The document describes the features and characteristics of the TLE4207G dual half-bridge driver, which is designed for automotive and industrial motion control applications. Its features include high voltage power technology, low quiescent current, overtemperature protection, fault detection, etc.

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BB914 is a silicon variable capacitance diode from Dinghao Electronics. It features high tuning ratio, low supply voltage, good linearity, etc. It is suitable for FM radio tuners and car radios.

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This document describes the features and characteristics of the BB867 silicon tuning diode, which is suitable for SAT - Indor units. It has a high capacitance ratio, low series inductance, and excellent uniformity and matching.

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This document describes the features and characteristics of the BB867 silicon tuning diode. The diode has a high capacitance ratio, low series inductance, and excellent matching. It is suitable for SAT-Indor units. The document provides information on the model, package configuration, maximum ratings, and electrical characteristics of the product.

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BB837/BB857 is a silicon tuning diode produced by Dinghao company for satellite indoor units, which has high capacitance ratio, low series resistance, excellent uniformity and matching

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