Industrial Manuals
NXP PSMN1R4-30YLD MOSFET
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP
File format: PDF Size:313 KB
NXP PMGD290UCEA MOSFET
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
File format: PDF Size:391 KB
NXP PSMN020-100YS MOSFET
Standard level N-channel MOSFET in LFPAK package qualified to 175
File format: PDF Size:331 KB
NXP PMV250EPEA MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
File format: PDF Size:268 KB
NXP PSMN0R9-30YLD MOSFET
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP
File format: PDF Size:318 KB
NXP PSMN3R0-30YLD MOSFET
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP
File format: PDF Size:313 KB
NXP NX2020P1 MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
File format: PDF Size:295 KB
NXP BUK9K8R7-40E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:367 KB
NXP BUK9K6R8-40E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:369 KB
NXP BUK7K17-60E MOSFET
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:365 KB
NXP BUK7K12-60E MOSFET
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:355 KB
NXP BUK9K32-100E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:366 KB
NXP BUK9K25-40E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:344 KB
NXP BUK9K17-60E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:344 KB
NXP BUK9K134-100E MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:360 KB
NXP BUK7K18-40E MOSFET
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:339 KB
NXP BUK7K52-60E MOSFET
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
File format: PDF Size:331 KB
Analog Power AM20P02-99D MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,printers, and cordless telephones.
File format: PDF Size:167 KB
Analog Power AM20N10-130D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format: PDF Size:318 KB
Analog Power AM20N10-350D MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
File format: PDF Size:318 KB