Industrial Manuals

NXP BLF8G20LS-230V transistor

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

File format: PDF Size:184 KB

NXP BLF25M612 BLF25M612G transistor

12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.

File format: PDF Size:201 KB

NXP BLF8G09LS-400PW 8G09LS-400PGW transistor

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

File format: PDF Size:280 KB

NXP BLF888D BLF888DS transistor

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

File format: PDF Size:142 KB

NXP BLF8G10LS-300P transistor

300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

File format: PDF Size:193 KB

NXP BLC8G27LS-100AV transistor

100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.

File format: PDF Size:113 KB

NXP BLF8G09LS-400PW transistor

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

File format: PDF Size:280 KB

NXP BLP10H605 transistor

A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

File format: PDF Size:116 KB

NXP BLF8G27LS-100 transistor

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

File format: PDF Size:185 KB

NXP BLF8G24LS-150V 8G24LS-150GV 24LS-100GV transistor

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

File format: PDF Size:294 KB

NXP BLF184XR_BLF184XRS transistor

A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

File format: PDF Size:234 KB

CET H2288 Transistor

FEATURES 20V, 5.2A , RDS(ON) = 26mW @VGS = 4.5V. RDS(ON) = 35mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package.

File format: PDF Size:214 KB

CET CEG2288 Transistor

FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.

File format: PDF Size:139 KB

CET CEH2310 Transistor

FEATURES 30V, 6.2A , RDS(ON) = 33mW @VGS = 10V. RDS(ON) = 38mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating; RoHS compliant.

File format: PDF Size:275 KB

CET CEH2305 Transistor

FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired.

File format: PDF Size:258 KB

CET CEG8208 Transistor

FEATURES 20V, 6.2A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V

File format: PDF Size:249 KB

CET CEG8205A Transistor

FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.

File format: PDF Size:271 KB

CET CEC8218 Transistor

FEATURES 20V, 6.5A, RDS(ON) = 23mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

File format: PDF Size:273 KB

CET CEA6200 Transistor

FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

File format: PDF Size:254 KB

CET CEA6861 Transistor

FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

File format: PDF Size:129 KB

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