SAMSUNG K4S161622D-TI/E CMOS SDRAM handbook
Update: 30 September, 2023
K4S161622D-TI/E is a 1Mx16 synchronous high data rate dynamic random access memory produced by Samsung. The product uses Samsung's high-performance CMOS technology, and has 3.3V power supply, LVTTL compatibility, multi-bank operation, MRS cycle, address key programming, burst length, burst type and other features.
Brand: SAMSUNG
File format: PDF
Size: 685 KB
MD5 Checksum: 950DABDC427B6201D40DBF04A94F89D1
Publication date: 10 May, 2012
Downloads: -
PDF Link: SAMSUNG K4S161622D-TI/E CMOS SDRAM handbook PDF