NXP high voltage power bipolar transistors BUJ PHx series Manual

NXP BUJ and PHx series of high voltage power bipolar transistors use planar technology that delivers industry-leading cost-performance ratios. The high-voltage (up to 1200 V) capability is suitable for push-pull technologies. Fast switching times and low VCEsat ratings combine to reduce switching and conduction losses. The well-controlled hFE parameter reduces the need for banding or selection, making design-in easier and extending reliability. Versions with integrated diodes reduce component count and simplify the design even further.


Brand: NXP

File format: PDF

Size: 478 KB

MD5 Checksum: F365ADC8E0B35CC46AEA4A9B8F9041F5

Publication date: 22 March, 2012

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